THE DENSITY OF STATES OF SPUTTERED A-SI-H STUDIED BY THE SPACE-CHARGE-LIMITED CURRENT TECHNIQUE - THE INFLUENCE OF DEPOSITION PARAMETERS, LIGHT AND KEV-ELECTRON IRRADIATION

被引：13

作者：

GANGOPADHYAY, S ^{[1
]}

SCHRODER, B ^{[1
]}

GEIGER, J ^{[1
]}

机构：

[1] UNIV KAISERSLAUTERN,FACHBEREICH PHYS,D-6750 KAISERSLAUTERN,FED REP GER

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 56卷 / 03期

关键词：

D O I：

10.1080/13642818708221320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：321 / 333

页数：13

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