COLUMN-IIIA METAL-FILM DEPOSITION BY DISSOCIATIVE PHOTOIONIZATION OF METAL HALIDE VAPORS

被引：14

作者：

GEOHEGAN, DB

EDEN, JG

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.95017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1146 / 1148

页数：3

共 11 条

[1] PHOTOIONIZATION OF HIGH-TEMPERATURE VAPORS .I. IODIDES OF SODIUM MAGNESIUM AND THALLIUM [J].

BERKOWIT.J ;

CHUPKA, WA .

JOURNAL OF CHEMICAL PHYSICS, 1966, 45 (04) :1287-&

[2]

BRANDES EA, 1983, SMITHELLS METALS REF, P8

[3]

BURNHAM R, 1977, APPL PHYS LETT, V30, P133

[4] VACUUM ULTRAVIOLET DRIVEN CHEMICAL VAPOR-DEPOSITION OF LOCALIZED ALUMINUM THIN-FILMS [J].

CALLOWAY, AR ;

GALANTOWICZ, TA ;

FENNER, WR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :534-536

[5]

CALLOWAY AR, 1984, ATR848503 AER CORP R

[6]

GEOHEGAN DB, J CHEM PHYS

[7] ION-ASSISTED DEPOSITION OF OPTICAL THIN-FILMS - LOW-ENERGY VS HIGH-ENERGY BOMBARDMENT [J].

MCNEIL, JR ;

BARRON, AC ;

WILSON, SR ;

HERRMANN, WC .

APPLIED OPTICS, 1984, 23 (04) :552-559

[8]

TERENIN A, 1932, PHYS Z SOWJETUNION, V2, P299

[9] ION-BEAM EPIPLANTATION [J].

THOMAS, GE ;

BECKERS, LJ ;

VRAKKING, JJ ;

DEKONING, BR .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (03) :557-575

[10]

TOKUYAMA T, 1983, NUCL INSTRUM METHODS, V182, P241

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