DRAIN CONDUCTANCE OF JUNCTION GATE FETS IN HOT-ELECTRON RANGE

被引：41

作者：

YAMAGUCHI, K ^{[1
]}

KODERA, H ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/T-ED.1976.18450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：545 / 553

页数：9

共 13 条

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[5] 2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS [J].

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[6] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J].

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[7] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].

LEHOVEC, K ;

ZULEEG, R .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1415-&

[8] 2-DIMENSIONAL NUMERICAL FET MODEL FOR DC, AC, AND LARGE-SIGNAL ANALYSIS [J].

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[9]

REISER M, 1972, ELECTRON LETT, V8, P254, DOI 10.1049/el:19720188

[10]

Reiser M., 1972, COMP METH APPLIED ME, V1, P17

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