MANUFACTURABILITY ISSUES RELATED TO TRANSIENT THERMAL ANNEALING OF TITANIUM SILICIDE FILMS IN A RAPID THERMAL PROCESSOR

被引：4

作者：

SHENAI, K

机构：

[1] General Electric Company, Corporate Research and Development, River Road, Schenectady, NY

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1991年 / 4卷 / 01期

关键词：

D O I：

10.1109/66.75857

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transient thermal annealing of sputtered titanium films in a rapid thermal processor (RTP) is critically evaluated from manufacturability related considerations. In particular, thin film properties of resulting titanium silicide on polysilicon and silicon, process uniformity, and unit step wafer yield of high-density scaled device structures are investigated. The experimental results suggest that RTP silicides show good thin film properties for manufacturability on planar wafer surfaces. Transient thermal gradients in an RTP system are shown to cause substantial variations in the electrical and structural properties of TiSi(x) films formed on silicon substrates with varying substrate thicknesses. Closed-loop temperature control in an RTP reactor provided stoichiometrically identical TiSi(x) films with negligible substrate thickness dependence. Transient thermal effects are important to understand and optimize TiSi(x) formation in deep silicon trenches, nonplanar structures, and process monitor wafers with unknown wafer thicknesses in a production environment.

引用

页码：1 / 8

页数：8

共 10 条

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