A NEW 1-D CONDUCTING STATE STABILIZED BY STRONG H-BONDINGS IN HALOGEN-BRIDGED METAL-COMPLEXES

被引：9

作者：

OKAMOTO, H ^{[1
]}

TORIUMI, K ^{[1
]}

OKANIWA, K ^{[1
]}

MITANI, T ^{[1
]}

YAMASHITA, M ^{[1
]}

机构：

[1] NAGOYA UNIV,COLL GEN EDUC,NAGOYA,AICHI 464,JAPAN

来源：

SYNTHETIC METALS | 1991年 / 42卷 / 03期

关键词：

D O I：

10.1016/0379-6779(91)91478-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The 1-D bromo-bridged Ni complex with strongly enhanced 2-D H-bond network has the Mott-Hubbard-type electronic state, in which the electron-electron repulsive energy is responsible for gap-opening. In spite of the large optical gap (ca. 1.3 eV), the conductivity is fairly high (ca. 0.2 S/cm at R. T.) suggesting the presence of low energy carriers induced by the 1-D charge density instability. The possibility of the phase transition from the Peierls system to the Mott-Hubbard system has been checked by the hydrostatic-pressure effect on Raman scattering of the bromo-bridged Pd complex.

引用

页码：2791 / 2794

页数：4

共 6 条

[1]

AOKI R, 1982, MOL CRYST LIQ CRYST, V81, P301

[2]

CLARK RJH, 1984, ADV INFRARED RAMAN S, V11, P95

[3]

OKAMOTO H, IN PRESS PHYS REV B

[4]

OKANIWA K, UNPUB J PHYS SOC JPN