DEVELOPMENT OF MATERIALS FOR HIGH-TEMPERATURE SUPERCONDUCTOR JOSEPHSON-JUNCTIONS

被引:1
作者
HOULTON, RJ
REAGOR, DW
HAWLEY, ME
SPRINGER, KN
JIA, QX
MOMBOURQUETTE, CB
GARZON, FH
WU, XD
机构
[1] Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos
关键词
D O I
10.1109/77.402889
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have conducted a systematic optimization of deposition parameters for fabrication of multilayered oxide films to be used in the development of high temperature superconducting YBa2Cu3O7-x Superconducting Normal Superconducting junctions. These films were deposited onto <100> MgO substrates by off-axis sputtering using a custom fabricated multi-gun planar magnetron system. Each layer and the various combinations of materials were optimized for: epitaxial lattice match, crystal quality, film uniformity, electrical properties, and surface microstructure. In addition to the standard procedures commonly used to sputter deposit epitaxial oxide films, a variety of unique insitu and exsitu procedures were used to produce high quality multilayer devices, including: using a film nucleation temperature lower than the final film growth temperature, establishing the optimum substrate to target relationship, and timing of the oxygen anneal. Using a lower nucleation temperature when depositing the YBa2Cu3O7-x allowed us to dramatically improve the crystallinity and orientation of the superconductor on both unprocessed and ion-milled substrates. Completed multilayer devices consistently exhibited resistively shunted Josephson junction behavior in patterned bridges and SQUID's.
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收藏
页码:1639 / 1642
页数:4
相关论文
共 6 条
[1]   METASTABILITY OF SUPERCONDUCTING COMPOUNDS IN THE Y-BA-CU-O SYSTEM [J].
BROSHA, EL ;
DAVIES, PK ;
GARZON, FH ;
RAISTRICK, ID .
SCIENCE, 1993, 260 (5105) :196-198
[2]  
EOM CB, 1990, PHYSICA C, V1771, P354
[3]   GROWTH-MECHANISM OF SPUTTERED FILMS OF YBA2CU3O7 STUDIED BY SCANNING TUNNELING MICROSCOPY [J].
HAWLEY, M ;
RAISTRICK, ID ;
BEERY, JG ;
HOULTON, RJ .
SCIENCE, 1991, 251 (5001) :1587-1589
[4]  
MOECKLY BH, 1990, APPL PHYS LETT, V57
[5]  
REAGOR DW, 1993, APR MRS SPRING M SAN
[6]  
REAGOR DW, UNPUB DEV HIGH TEMPE