EVIDENCE FOR THE GROWTH-MECHANISM OF CR2O3 AT LOW OXYGEN POTENTIALS

被引：20

作者：

HINDAM, H

WHITTLE, DP

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 07期

关键词：

D O I：

10.1149/1.2120023

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1519 / 1523

页数：5

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