GROWTH OF ALPHA-SIC SINGLE CRYSTALS FROM CHROMIUM SOLUTION

[1] PHOTOLUMINESCENCE OF ALPHA-SIC [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 517 - 520

[2] CHANG HC, 1960, SILICON CARBIDE, P496

[3] Choyke WJ, 1960, SILICON CARBIDE, P306

[4] GRIFFITHS LB, 1963, APR PITTSB M EL SOC

[5] ELECTRICAL CONTACTS TO SILICON CARBIDE [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (06) : 914 - 917

[6] PREPARATION OF CRYSTALS OF PURE HEXAGONAL SIC [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 735 - 739

[7] HERGENROTHER KM, 1961, Patent No. 2996456

[8] Lely A, 1955, BER DEUT KERAM GES, V8, P229

[9] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2885 - &

[10] STRUCTURE AND CHARACTERISTICS OF SILICON CARBIDE LIGHT-EMITTING JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (07) : 765 - 776

[1] PHOTOLUMINESCENCE OF ALPHA-SIC [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 517 - 520

[2] CHANG HC, 1960, SILICON CARBIDE, P496

[3] Choyke WJ, 1960, SILICON CARBIDE, P306

[4] GRIFFITHS LB, 1963, APR PITTSB M EL SOC

[5] ELECTRICAL CONTACTS TO SILICON CARBIDE [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (06) : 914 - 917

[6] PREPARATION OF CRYSTALS OF PURE HEXAGONAL SIC [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 735 - 739

[7] HERGENROTHER KM, 1961, Patent No. 2996456

[8] Lely A, 1955, BER DEUT KERAM GES, V8, P229

[9] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2885 - &

[10] STRUCTURE AND CHARACTERISTICS OF SILICON CARBIDE LIGHT-EMITTING JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (07) : 765 - 776