CHARACTERIZATION OF INTRINSIC AMORPHOUS HYDROGENATED SILICON AS A THIN-FILM PHOTO-CATHODE MATERIAL - EFFICIENT PHOTO-REDUCTION PROCESSES IN AQUEOUS-SOLUTION

被引：26

作者：

HARRISON, DJ

CALABRESE, GS

RICCO, AJ

DRESNER, J

WRIGHTON, MS

机构：

[1] MIT,DEPT CHEM,CAMBRIDGE,MA 02139

[2] RCA CORP LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 1983年 / 105卷 / 13期

关键词：

D O I：

10.1021/ja00351a015

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：4212 / 4219

页数：8

共 58 条

[1] SEMICONDUCTOR ELECTRODES .40. PHOTOASSISTED HYDROGEN EVOLUTION AT POLY(BENZYL VIOLOGEN)-COATED P-TYPE SILICON ELECTRODES [J].

ABRUNA, HD ;

BARD, AJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1981, 103 (23) :6898-6901

[2] P-TYPE AMORPHOUS-SILICON LIQUID JUNCTION SOLAR-CELL [J].

AYERS, WM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1644-1646

[3]

AYERS WM, 1982, J APPL PHYS, V52, P6911

[4] ELECTROCHEMICAL CHARACTERIZATION OF PARA-TYPE SEMICONDUCTING TUNGSTEN DISULFIDE PHOTO-CATHODES - EFFICIENT PHOTO-REDUCTION PROCESSES AT SEMICONDUCTOR LIQUID ELECTROLYTE INTERFACES [J].

BAGLIO, JA ;

CALABRESE, GS ;

HARRISON, DJ ;

KAMIENIECKI, E ;

RICCO, AJ ;

WRIGHTON, MS ;

ZOSKI, GD .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1983, 105 (08) :2246-2256

[5] CHARACTERIZATION OF N-TYPE SEMICONDUCTING TUNGSTEN DISULFIDE PHOTO-ANODES IN AQUEOUS AND NON-AQUEOUS ELECTROLYTE-SOLUTIONS - PHOTOOXIDATION OF HALIDES WITH HIGH-EFFICIENCY [J].

BAGLIO, JA ;

CALABRESE, GS ;

KAMIENIECKI, E ;

KERSHAW, R ;

KUBIAK, CP ;

RICCO, AJ ;

WOLD, A ;

WRIGHTON, MS ;

ZOSKI, GD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1461-1472

[6] THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J].

BARD, AJ ;

BOCARSLY, AB ;

FAN, FRF ;

WALTON, EG ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3671-3677

[7] Thermodynamic Potential for the Anodic Dissolution of n-Type Semiconductors [J].

Bard, Allen J. ;

Wrighton, Mark S. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) :1706-1710

[8] PHOTO-REDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES - EVIDENCE FOR FERMI LEVEL PINNING [J].

BOCARSLY, AB ;

BOOKBINDER, DC ;

DOMINEY, RN ;

LEWIS, NS ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3683-3688

[9] PHOTOELECTROCHEMICAL REDUCTION OF N,N'-DIMETHYL-4,4'-BIPYRIDINIUM IN AQUEOUS-MEDIA AT P-TYPE SILICON - SUSTAINED PHOTOGENERATION OF A SPECIES CAPABLE OF EVOLVING HYDROGEN [J].

BOOKBINDER, DC ;

LEWIS, NS ;

BRADLEY, MG ;

BOCARSLY, AB ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1979, 101 (26) :7721-7723

[10]

BRUCE JA, 1982, ISRAEL J CHEM, V22, P184

← 1 2 3 4 5 6 →