INTERSTITIAL SUBSTITUTIONAL DIFFUSION KINETICS AND DISLOCATION-INDUCED TRAPPING OF ZINC IN PLASTICALLY DEFORMED SILICON

被引：19

作者：

BRACHT, H ^{[1
]}

STOLWIJK, NA ^{[1
]}

YONENAGA, I ^{[1
]}

MEHRER, H ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 137卷 / 02期

关键词：

D O I：

10.1002/pssa.2211370220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diffusion of Zn into dislocation-rich Si monocrystals is investigated with the aid of spreading-resistance analysis. To perform isothermal annealing in the seconds and minutes regime a special technique utilizing the high-temperature volatility of Zn is applied. This enables us to follow in detail the progressive Zn incorporation also at early diffusion stages. Within the theory of the kick-out mechanism effective diffusivities and interstitial-substitutional exchange rates are deduced from the time development of the penetration profiles in the temperature range 1143 to 1481 K. Deviations from the theoretical prediction are frequently observed. These can be accounted for by deep trapping of Zn most probably induced by dislocations. Fitting of computer-simulated profiles to the data provides volume averages of trap concentrations and trapping rates.

引用

页码：499 / 514

页数：16

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