SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES

被引：3

作者：

DAVIES, GJ

SKEVINGTON, PJ

MORRIS, JC

JONES, AC

RUSHWORTH, S

FOORD, JS

LEVOGUER, CL

机构：

[1] EPICHEM LTD,WIRRAL L62 3QF,MERSEYSIDE,ENGLAND

[2] UNIV OXFORD,PHYS CHEM LAB,OXFORD OX1 3QZ,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 136卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90396-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The chemical beam epitaxy (CBE) growth of InGaAs lattice matched to InP has been compared using the three Ga precursors triethylgallium (TEG), triisobutylgallium (TIBG) and triisopropylgallium (TIPG) in conjunction with trimethylindium (TMI). All three Ga precursors exhibit similar behaviour, with the Ga content of the epilayers falling rapidly as the temperature moves outside a narrow growth window centred at 500-degrees-C. The Ga:In concentration ratio also depends on the group V:III flux ratios used during growth. No significant relaxation of the tight control of growth conditions required to grow lattice-matched InGaAs reproducibly is offered by TIPG or TIBG, in comparison to TEG.

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页码：133 / 137

页数：5

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