THE PRESSURE-DEPENDENCE OF TC IN THE INFINITE-LAYER ELECTRON-DOPED COMPOUND SR0.84ND0.16CUO2

被引：18

作者：

WOOTEN, CL ^{[1
]}

O, BH ^{[1
]}

MARKERT, JT ^{[1
]}

SMITH, MG ^{[1
]}

MANTHIRAM, A ^{[1
]}

ZHOU, J ^{[1
]}

GOODENOUGH, JB ^{[1
]}

机构：

[1] UNIV TEXAS,CTR MAT SCI & ENGN,AUSTIN,TX 78712

来源：

PHYSICA C | 1992年 / 192卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(92)90736-V

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the effect of nearly hydrostatic pressure in the range 0-20 kbar on the resistively determined superconducting transition temperature T(c) of the recently discovered infinite-layer electron-doped copper-oxide compound Sr0.84ND0.16CuO2. In contrast to other electron-doped copper oxides, we observe a positive and appreciable change in T(c) with pressure with value dT(c)/dP = + 0.06 +/- 0.02 K/kbar. Thus the sign and magnitude of dT(c)/dP are not dominated by the carrier type; in this compound, we suggest they are determined by a pressure-induced enhancement of the interlayer coupling.

引用

页码：13 / 17

页数：5

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