SEMIINSULATING NATURE OF GAS-SOURCE MOLECULAR-BEAM EPITAXIAL INGAP GROWN AT VERY-LOW TEMPERATURES

被引：12

作者：

LOOK, DC ^{[1
]}

HE, Y ^{[1
]}

RAMDANI, J ^{[1
]}

ELMASRY, N ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.109781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xP lattice matched to GaAs (x congruent-to 0.51) has proven to be useful in many device applications. Here we show that undoped, semi-insulating InGaP is possible by growing with gas source molecular beam epitaxy at very low temperatures, 150-250-degrees-C. The material grown at about 200-degrees-C is n-type with a 296-K resistivity of 9 X 10(5) OMEGA cm, a mobility of 120 cm2/V s, and a donor activity energy of 0.48 eV. When annealed at 600-degrees-C for 1 h, the resistivity increases to greater than 10(9) OMEGA cm and the resistivity activation energy to 0.8 eV.

引用

页码：1231 / 1233

页数：3

共 13 条

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