EXPERIMENTAL-DETERMINATION OF THE CONDUCTION-BAND OFFSET AT GAAS/GA1-XALXAS HETEROJUNCTIONS WITH THE USE OF BALLISTIC ELECTRONS

被引：11

作者：

FORCHHAMMER, T ^{[1
]}

VEJE, E ^{[1
]}

TIDEMANDPETERSSON, P ^{[1
]}

机构：

[1] TELE DANMARK RES,DK-2970 HORSHOLM,DENMARK

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.52.14693

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The conduction-band offset Delta E(c) at GaAs/Ga1-xAlxAs heterojunctions has been measured by observing radiative recombination of electrons, injected ballistically from Ga1-xAlxAs into GaAs, with accepters in GaAs. Additionally, the total band-gap energy difference Delta E(g) between Ga1-xAlxAs and GaAs was measured with the use of photoluminescence, permitting a determination of the conduction-band offset coefficient Q(c) = Delta E(c)/Delta E(g). The measurements were carried out for various values of the mole fraction x of aluminum in the Ga1-xAlxAs alloy, up to x=0.53. In the direct band-gap region (i.e.,x < 0. 39), Q(c) is constant and equal to 0.69. Above x = 0.39, Q(c) decreases steadily with increasing x.

引用

页码：14693 / 14698

页数：6

共 13 条

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