LOW-FREQUENCY NOISE BEHAVIOR OF HIGH-ENERGY ELECTRON-IRRADIATED SI N(+)P JUNCTION DIODES

被引:8
作者
DUBUC, JP
SIMOEN, E
VASINA, P
CLAEYS, C
机构
[1] IMEC, B-3001 Leuven
[2] CEM, Univ., Montpellier II
关键词
ONE-OVER-F NOISE; SEMICONDUCTOR DEVICE NOISE; RADIATION EFFECTS; RADIATION HARDENING (ELECTRONICS); PN JUNCTIONS;
D O I
10.1049/el:19950644
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The low-frequency noise behaviour in forward operation of high-energy electron irradiated Si n(+)p diodes is reported. For diodes fabricated on Czochralski substrates, negligible change in noise is observed, whereas for float-zone diodes, a reduction occurs after the irradiation. By comparison with reverse bias gated diode characteristics, it is concluded that the excess 1/f noise of the irradiated diodes is not correlated with the irradiation-induced degradation of the Si-SiO2 interface.
引用
收藏
页码:1016 / 1018
页数:3
相关论文
共 7 条
[1]   DISCRETE CONDUCTANCE FLUCTUATIONS IN SILICON EMITTER JUNCTIONS DUE TO DEFECT CLUSTERING AND EVIDENCE FOR STRUCTURAL-CHANGES BY HIGH-ENERGY ELECTRON-IRRADIATION AND ANNEALING [J].
ANDERSSON, GI ;
ANDERSSON, MO ;
ENGSTROM, O .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) :2680-2691
[2]   SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].
GROVE, AS ;
FITZGERALD, DJ .
SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+
[3]   SURFACE STATE RELATED 1/F NOISE IN P!N JUNCTIONS [J].
HSU, ST .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :843-+
[4]  
SIMEON E, UNPUB IEEE T ELECTRO
[5]  
SIMEON E, 1995, APPL PHYS LETT
[6]   SURFACE RECOMBINATION MODEL OF P-N DIODE FLICKER NOISE [J].
VANDERZIEL, A .
PHYSICA, 1970, 48 (02) :242-+
[7]   ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES [J].
VANHELLEMONT, J ;
SIMOEN, E ;
CLAEYS, C ;
KANIAVA, A ;
GAUBAS, E ;
BOSMAN, G ;
JOHLANDER, B ;
ADAMS, L ;
CLAUWS, P .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :1924-1931