PHOTOCHEMICAL VAPOR-DEPOSITION OF UNDOPED AND N-TYPE AMORPHOUS-SILICON FILMS PRODUCED FROM DISILANE

被引：44

作者：

INOUE, T

KONAGAI, M

TAKAHASHI, K

机构：

来源：

关键词：

D O I：

10.1063/1.94501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：774 / 776

页数：3

共 5 条

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[3] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L46 - L48
[4] PHOTOCHEMISTRY OF SILICON-COMPOUNDS .4. MERCURY PHOTOSENSITIZATION OF DISILANE
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[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1973, 95 (04) : 1017 - 1024
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