REACTIVE ION ETCHING OF GAAS USING CH4 - IN HE, NE AND AR

被引：5

作者：

LAW, VJ

INGRAM, SG

TEWORDT, M

JONES, GAC

机构：

[1] Cavendish Lab., Cambridge Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 05期

关键词：

D O I：

10.1088/0268-1242/6/5/019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF-plasma reactive ion etching of GaAs using a dilute mixture of methane in helium, hydrogen, neon or argon is described. The process is shown to etch GaAs at rates up to 60 nm min-1 for CH4:Ar, with a high degree of anisotropy. Results show that etch rates scale with the substitution of He < Ne < H2 < Ar admixtures.

引用

页码：411 / 413

页数：3

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