PREPARATION OF CRYSTALLINE SIC THIN-FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION AND BY ION-BEAM MODIFICATION OF SILICON

被引：7

作者：

DERST, G ^{[1
]}

KALBITZER, S ^{[1
]}

KROTZ, G ^{[1
]}

MULLER, G ^{[1
]}

机构：

[1] MESSERSCHMITT BOLKOW BLOHM GMBH,W-8000 MUNICH 80,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 11卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(92)90195-F

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin crystalline films of SiC have been produced by ion beam modification of heteroepitaxial silicon thin films on sapphire and by plasma-enhanced chemical vapour deposition on crystalline silicon and sapphire substrates. Both methods yield highly transparent crystalline material. The preparation procedures and the optical properties of these materials are described and applications to optical lithography are pointed out.

引用

页码：79 / 82

页数：4

共 8 条

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