ANALYSIS AND OPTIMIZATION OF THE ELECTRON-CYCLOTRON-RESONANCE PLASMA FOR NITRIDE EPITAXY

被引：12

作者：

OHTANI, A

STEVENS, KS

KINNIBURGH, M

BERESFORD, R

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

[2] BROWN UNIV,CTR ADV MAT RES,PROVIDENCE,RI 02912

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80070-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Mg-doped GaN films are grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Plasma diagnosis and analysis predict operating conditions that minimize the ion bombardment during the growth. The ion exposure strongly affects the photoluminescence intensity associated with the Me acceptor level in GaN. The drift mechanism of the nitrogen ions from the electron cyclotron resonance region is discussed. Bp minimizing the ion drift during growth, intense photoluminescence is obtained from the films.

引用

页码：902 / 907

页数：6

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