SOLID-PHASE EPITAXIAL REGROWTH PHENOMENA IN SILICON

被引：61

作者：

WILLIAMS, JS

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90803-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：219 / 228

页数：10

共 53 条

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CAMPISANO, SU ;

FOTI, G ;

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[5]

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APPLIED PHYSICS LETTERS, 1980, 36 (04) :273-275

[8] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

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JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

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MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[10] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

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SIGMON, TW .

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