EFFECT OF QUENCHING RATE AND ANNEALING ON CONCENTRATION OF QUENCHED-IN RECOMBINATION CENTERS IN HEAT-TREATED SILICON

被引：6

作者：

GLINCHUK, KD ^{[1
]}

LITOVCHENKO, NM ^{[1
]}

MERKER, R ^{[1
]}

机构：

[1] ACAD SCI UKSSR,INST SEMICOND,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 35卷 / 02期

关键词：

D O I：

10.1002/pssa.2210350262

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K157 / K160

页数：4

共 11 条

[1] QUENCHED-IN DEFECTS IN P-TYPE SILICON [J].

BEMSKI, G ;

DIAS, CA .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :2983-+

[2] QUENCHED-IN LEVELS IN P-TYPE SILICON [J].

ELSTNER, L ;

KAMPRATH, W .

PHYSICA STATUS SOLIDI, 1967, 22 (02) :541-&

[3] SOLUBILITY AND ORIGIN OF THERMALLY INDUCED RECOMBINATION CENTERS IN N-TYPE AND P-TYPE SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

MERKER, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02) :K109-K113

[4] ROLE OF IMPURITIES IN FORMATION OF QUENCHED-IN RECOMBINATION CENTERS IN THERMALLY TREATED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

MERKER, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (02) :K87-K90

[5] DECAY OF EXCESS CARRIER CONCENTRATION IN THERMALLY TREATED SILICON [J].

GLINCHUK, KD ;

LITOVCHE.NM ;

LINNIK, LF ;

MERKER, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (02) :749-&

[6]

KONOROVA LF, 1974, FIZ TVERD TELA+, V16, P547

[7] THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON [J].

LESKOSCHEK, W ;

FEICHTINGER, H ;

VIDRICH, G .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02) :601-610

[8] EXPERIMENTS ON ORIGIN OF PROCESS-INDUCED RECOMBINATION CENTERS IN SILICON [J].

SAH, CT ;

WANG, CT .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1767-1776

[9] DEFECTS IN QUENCHED SILICON [J].

SWANSON, ML .

PHYSICA STATUS SOLIDI, 1969, 33 (02) :721-&

[10] RECOMBINATION AT IRON ATOMS AND AT THERMALLY GENERATED LATTICE DEFECTS IN SILICON [J].

THIESSEN, K ;

ZECH, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (02) :K133-&

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