EVIDENCE FOR GAAS SUBSTRATE STRAIN CAUSED BY A CDTE EPITAXIAL LAYER

[1] [Anonymous], 1974, INT TABLES XRAY CRYS

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[3] DORNHAUS R, 1976, SOLID STATE PHYSICS

[4] James R. W., 1982, OPTICAL PRINCIPLES D

[5] SCHMIT JL, 1984, UNPUB IRIS DETECTOR

[6] THERMAL EXPANSIONS FRON 2 TO 40 DEGREES K OF GE SI AND 4 3-5 COMPOUNDS [J]. PHYSICAL REVIEW, 1967, 163 (03): : 779 - &

[7] VERSATILE MONOCHROMATOR FOR SYNCHROTRON X-RAYS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 222 (1-2) : 177 - 179

[1] [Anonymous], 1974, INT TABLES XRAY CRYS

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[3] DORNHAUS R, 1976, SOLID STATE PHYSICS

[4] James R. W., 1982, OPTICAL PRINCIPLES D

[5] SCHMIT JL, 1984, UNPUB IRIS DETECTOR

[6] THERMAL EXPANSIONS FRON 2 TO 40 DEGREES K OF GE SI AND 4 3-5 COMPOUNDS [J]. PHYSICAL REVIEW, 1967, 163 (03): : 779 - &

[7] VERSATILE MONOCHROMATOR FOR SYNCHROTRON X-RAYS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 222 (1-2) : 177 - 179