CRYSTAL-ORIGINATED SINGULARITIES ON SI WAFER SURFACE AFTER SC1 CLEANING

被引：238

作者：

RYUTA, J ^{[1
]}

MORITA, E ^{[1
]}

TANAKA, T ^{[1
]}

SHIMANUKI, Y ^{[1
]}

机构：

[1] JAPAN SILICON CO LTD, NODA, CHIBA 278, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期

关键词：

Cleaning; Defect; Particle; Silicon;

D O I：

10.1143/JJAP.29.L1947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is clarified that a new type of singularity is formed on Si wafer surface by the Standard Cleaning 1 (SC1) of the RCA cleaning process. Such singularities are perceived by laser particle counters as small particles on wafers. it is shown that the singularities correspond to small shallow pits caused by the etching effect of the SC1 cleaning solution. The origin of the pits is presumed to be some kind of defect in the melt-grown crystals. © 1990 IOP Publishing Ltd.

引用

页码：L1947 / L1949

页数：3