ELECTRICAL-RESISTIVITY OF ULTRATHIN, EPITAXIAL COGA ON GAAS

被引：9

作者：

KUO, TC

WANG, KL

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 26期

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D O I：

10.1063/1.105687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The successful growth of ultrathin CoGa on GaAs by MBE is demonstrated. The crystalline quality of the films is verified by in situ RHEED, RBS, and x-ray rocking curve. Transport studies are performed in the temperature range of 4 to 300 K for layer thickness from 10 to 730 angstrom, and all the films are found to be electrically continuous. The Markowitz's model [Phys. Rev. B 15, 3617 (1977)] of the electrical resistivity is applied to analyze the measured data. Finally, the specularly scattering probability of these thin films is studied using Fuchs' theory [Proc. Cambridge Philos. Soc. 34, 100 (1938)].

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页码：3399 / 3401

页数：3

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