ULTRAFAST BAND-EDGE CARRIER DYNAMICS IN IN0.65GA0.35AS

被引：4

作者：

PELOUCH, WS

SCHLIE, LA

机构：

[1] Laser and Imaging Directorate, Phillips Laboratory, Kirtland AFB

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 18期

关键词：

D O I：

10.1063/1.112963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ultrafast band-edge carrier dynamics in In0.65Ga0.35As/GaAs are studied using a transmission correlation technique in the 77-300 K temperature range. The experiment is performed using a femtosecond optical parametric oscillator tunable in the 1.5-1.8 mu m spectral range with sub-100-fs pulses. Rapid recovery (less than or equal to 10 ps) of the nonlinear absorption is observed, suggesting an exceptionally high rate of recombination predominantly due to dislocations at the InGaAs/GaAs heterojunction. The phonon-scattering time is experimentally identified and measured to be 200-400 fs.

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页码：2323 / 2325

页数：3

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