HIGHLY ELECTRONEGATIVE METALLIC CONTACTS TO SEMICONDUCTORS USING POLYMERIC SULFUR NITRIDE

被引：22

作者：

SCRANTON, RA ^{[1
]}

MOONEY, JB ^{[1
]}

MCCALDIN, JO ^{[1
]}

MCGILL, TC ^{[1
]}

MEAD, CA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 01期

关键词：

D O I：

10.1063/1.88868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：47 / 48

页数：2

共 14 条

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JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[4]

HAERI SY, 1974, P C METAL SEMICONDUC, P84

[5] FUNDAMENTAL TRANSITION IN ELECTRONIC NATURE OF SOLIDS [J].

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MCGILL, TC ;

MEAD, CA .

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[6] METAL-SEMICONDUCTOR SURFACE BARRIERS [J].

MEAD, CA .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&

[7]

MEAD CA, 1969, OHMIC CONTACTS SEMIC, P6

[8] SYNTHESIS AND STRUCTURE OF METALLIC POLYMERIC SULFUR NITRIDE, (SN)X, AND ITS PRECURSOR, DISULFUR DINITRIDE, S2N2 [J].

MIKULSKI, CM ;

RUSSO, PJ ;

SARAN, MS ;

MACDIARMID, AG ;

GARITO, AF ;

HEEGER, AJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1975, 97 (22) :6358-6363

[9]

MIKULSKI CM, 1975, APPL PHYS LETT, V26, P612

[10]

PAULING L, 1975, CHEMISTRY, P174

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