REDUCED GAIN OF ION-IMPLANTED TRANSISTORS

被引:9
作者
NICHOLAS, KH
FORD, RA
DANIEL, PJ
SULLIVAN, CW
SANT, P
BULL, C
BOOKER, GR
机构
[1] MULLARD RES LABS,REDHILL,SURREY,ENGLAND
[2] ASSOC SEMICOND MFG,SOUTHAMPTON,ENGLAND
[3] UNIV OXFORD,DEPT MET,OXFORD,ENGLAND
关键词
D O I
10.1063/1.88149
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:320 / 322
页数:3
相关论文
共 2 条
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  • [2] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON
    SANDERS, IR
    DOBSON, PS
    [J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (167): : 881 - &