CHEMICAL VAPOR-DEPOSITION OF PHOSPHORUS NITRIDE AND RELATED-COMPOUNDS

被引:16
作者
FURUKAWA, Y
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 08期
关键词
D O I
10.1143/JJAP.23.1157
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1157 / 1158
页数:2
相关论文
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[1]   CHEMICAL VAPOR-DEPOSITION OF INSULATING FILMS USING NITROGEN TRIFLUORIDE [J].
FURUKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (03) :376-377
[2]   CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF PHOSPHORUS-NITRIDE (P3N5) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES [J].
HIROTA, Y ;
KOBAYASHI, T .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5037-5043
[3]   REDUCTION OF INTERFACE STATES AND FABRICATION OF P-CHANNEL INVERSION-TYPE INP-MISFET [J].
OKAMURA, M ;
KOBAYASHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L599-L602