ON THE RHEED SPECULAR BEAM AND ITS INTENSITY OSCILLATION DURING MBE GROWTH OF GAAS

被引：56

作者：

ZHANG, J ^{[1
]}

NEAVE, JH ^{[1
]}

JOYCE, BA ^{[1
]}

DOBSON, PJ ^{[1
]}

FAWCETT, PN ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT ENGN SCI,OXFORD OX1 3PJ,ENGLAND

来源：

SURFACE SCIENCE | 1990年 / 231卷 / 03期

关键词：

D O I：

10.1016/0039-6028(90)90207-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The importance of the often neglected reflection of electrons in RHEED is established through examination of measurements of the specular beam intensity under different diffraction conditions from various surfaces. These results, together with rocking curve measurements provide an insight into ways in which the specular beam intensity is affected by changes on the surface. The necessary condition for the existence of intensity oscillations is identified and its diffraction basis is discussed. The model is subsequently applied to the study of the formation of the "inverted" interface during interrupted growth of GaAs/(Al,Ga)As heterojunctions. © 1990.

引用

页码：379 / 388

页数：10

共 24 条

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