STRONGLY QUENCHED DEFORMATION POTENTIALS OF MN ACCEPTOR IN GAAS

[1] STRESS DEPENDENCE OF PHOTOLUMINESCENCE IN GAAS [J]. PHYSICAL REVIEW, 1967, 161 (03): : 695 - &

[2] Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X

[3] NONHYDROGENIC EXCITON AND ENERGY-GAP OF GAAS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (07) : 442 - &

[4] SPIN AND COMBINED RESONANCE ON ACCEPTOR CENTRES IN GE AND SI TYPE CRYSTALS .1. PARAMAGNETIC RESONANCE IN STRAINED AND UNSTRAINED CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1467 - +

[5] Condon E. U., 1970, THEORY ATOMIC SPECTR

[6] ELASTIC-CONSTANTS OF GAAS FROM 2 K TO 320 K [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (13): : 2105 - 2118

[7] DEAN PJ, 1972, SOLID STATE COMMUN, V10, P497

[8] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 76 - 83

[9] KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329

[10] EDGE EMISSION INVOLVING MANGANESE IMPURITIES IN GAAS AT 4.2-DEGREES-K [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (09) : 265 - 268

[1] STRESS DEPENDENCE OF PHOTOLUMINESCENCE IN GAAS [J]. PHYSICAL REVIEW, 1967, 161 (03): : 695 - &

[2] Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X

[3] NONHYDROGENIC EXCITON AND ENERGY-GAP OF GAAS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (07) : 442 - &

[4] SPIN AND COMBINED RESONANCE ON ACCEPTOR CENTRES IN GE AND SI TYPE CRYSTALS .1. PARAMAGNETIC RESONANCE IN STRAINED AND UNSTRAINED CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1467 - +

[5] Condon E. U., 1970, THEORY ATOMIC SPECTR

[6] ELASTIC-CONSTANTS OF GAAS FROM 2 K TO 320 K [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (13): : 2105 - 2118

[7] DEAN PJ, 1972, SOLID STATE COMMUN, V10, P497

[8] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 76 - 83

[9] KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329

[10] EDGE EMISSION INVOLVING MANGANESE IMPURITIES IN GAAS AT 4.2-DEGREES-K [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (09) : 265 - 268