STUDY OF THE CRYSTALLINE-STRUCTURE AND OF THE COMPOSITION OF PULVERIZED GALLIUM-ARSENIDE, WITH OR WITHOUT LASER ANNEALING

被引:4
作者
ALIMOUSSA, L
CARCHANO, H
FASSIFIHRI, A
LALANDE, F
LOUSSIER, R
机构
来源
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期
关键词
D O I
10.1051/jphyscol:1982145
中图分类号
学科分类号
摘要
引用
收藏
页码:341 / 346
页数:6
相关论文
共 10 条
[1]   GROWTH OF HIGH-QUALITY EPITAXIAL GAAS FILMS BY SPUTTER DEPOSITION [J].
BARNETT, SA ;
BAJOR, G ;
GREENE, JE .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :734-737
[2]  
Dapkus P. D., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P960
[3]  
Guinier A., 1964, THEORIE TECHNIQUE RA, P482
[4]   PLASMA-ASSISTED DEPOSITION AND EPITAXY OF GAAS FILMS [J].
HARIU, T ;
TAKENAKA, K ;
SHIBUYA, S ;
KOMATSU, Y ;
SHIBATA, Y .
THIN SOLID FILMS, 1981, 80 (1-3) :235-239
[5]  
HOVEL HJ, 1976, SOLAR CELLS, V2, P103
[6]   EFFICIENCY CALCULATIONS FOR THIN-FILM POLYCRYSTALLINE SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS [J].
LANZA, C ;
HOVEL, HJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :392-396
[7]  
MOLNAR B, 1964, J APPL PHYS, V12, P3554
[8]  
SCHILLER C, 1978, J MICROSC SPECT ELEC, V3, P255
[9]  
SHIRLEY SC, 1978, 13E IEEE PHOT C
[10]  
Yeh Y. C. M., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P966