JFET-PMOS TECHNOLOGY IN THE DESIGN OF MONOLITHIC PREAMPLIFIER SYSTEMS FOR MULTIELECTRODE DETECTORS

This paper reviews some basic steps in the development of a low-noise monolithic preamplifier system for multielectrode detectors. Some of these steps refer to the realisation of an effective filter on the monolithic chip. Some others were oriented to arriving at a technology suitable for a low noise design. A purposely developed, nonhomogeneous monolithic process, able to combine N and P-channel JFETs and N and P-channel MOS on the same substrate, was identified as the one suiting the actual purpose. Radiation hardening considerations led afterwards to restrict the design to two device categories only, NJFET and PMOS. As a preliminary result of the effort produced in the areas of filter design and technology development, a 64 channel preamplifier system for microstrip detectors is described.