LONG RADIATIVE LIFETIMES OF BIEXCITONS IN GAAS/ALXGA1-XAS QUANTUM-WELLS

被引：34

作者：

CITRIN, DS

机构：

[1] Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, MI 48109-2099

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.50.17655

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dynamics of biexciton radiative decay in semiconductor quantum wells is treated within the excitonic-molecule mode including super-radiance, exciton recoil, and nonzero photon momentum. For parameters describing GaAs/AlxGa1-xAs quantum wells, we find that the rate for the decay of the excitonic molecule (in the ground state of the relative motion between excitons) into an exciton and a photon is less than the decay rate characteristic of radiative free one-excitons. © 1994 The American Physical Society.

引用

页码：17655 / 17658

页数：4

共 24 条

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