ON THE PHOTORESPONSE OF GAAS-MESFETS - BACKGATING AND DEEP TRAPS EFFECT

被引：14

作者：

PAPAIONANNOU, GJ ^{[1
]}

FORREST, JR ^{[1
]}

机构：

[1] MARCONI DEF SYST LTD,STANMORE HA7 4LY,MIDDX,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 03期

关键词：

D O I：

10.1109/T-ED.1986.22497

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：373 / 378

页数：6

共 27 条

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[9] COMMENTS ON HIGH-SPEED PHOTORESPONSE MECHANISM OF A GAAS-MESFET [J].

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[10]

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