RAMAN-SCATTERING AND RESISTIVITY MEASUREMENTS FOR ION-IRRADIATED YBA2CU3O7 EPITAXIAL-FILMS

被引：3

作者：

BELOUSOV, MV

CHUDNOVSKII, FA

DAVYDOV, VY

ELKIN, BS

SHOKHOR, SL

VELICHKO, VY

机构：

[1] AF IOFFE PHYSICOTECH INST,ST PETERBURG 194021,USSR

[2] ST PETERBURG STATE TECH UNIV,ST PETERBURG 195251,USSR

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 81卷 / 06期

关键词：

D O I：

10.1016/0038-1098(92)90599-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Polarized Raman spectra and resistivity-temperature curves for 60 keV N+ ion-implanted epitaxial thin films of YBa2Cu3O7, deposited on SrTiO3 (110) substrates, have been measured. Ion implantation leads to an intensity decrease and a widening of the crystalline Raman lines until they vanish, and to the appearance and growth of a broad nonpolarized band centered at 580 cm-1, which is inherent to amorphous YBa2Cu3Ox films. The Raman spectra indicate coexistence of amorphous and crystalline phases in a wide dose range until the film structure is completely amorphized at doses about 10(15) cm-2. The superconducting properties are observed to deteriorate and disappear upon only a slight damage of the lattice. A simple model of the lattice destruction upon N+ ion irradiation is proposed, taking into account formation and accumulation of cylindrical damage tracks consisting of two coaxial regions.

引用

页码：493 / 496

页数：4

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