LOW-THRESHOLD 1.5 MU-M QUANTUM-WELL LASERS GROWN BY ATMOSPHERIC-PRESSURE MOCVD WITH TERTIARYBUTYLARSINE (TBA) AND TERTIARYBUTYLPHOSPHINE (TBP)

被引：17

作者：

HEIMBUCH, ME ^{[1
]}

HOLMES, AL ^{[1
]}

MACK, MP ^{[1
]}

DENBAARS, SP ^{[1
]}

COLDREN, LA ^{[1
]}

BOWERS, JE ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 04期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TBA and TBP are liquid organometallic sources that are a safer alternative to arsine and phosphine. Using TBA and TBP, we have successfully grown lattice matched In0.53Ga0.47As/InP single quantum well lasers emitting at 1.5 mum with a threshold current density of 220 A/cm2 for broad area devices 3.5 mm in length.

引用

页码：340 / 342

页数：3

共 6 条

[1]

GRODZINSKI P, 4TH P INT C INP REL, P449

[2]

MACK MP, ELECTRONIC MATERIALS

[3]

MCILROY PWA, 1985, IEEE J QUANTUM ELECT, V21, P1958, DOI 10.1109/JQE.1985.1072606

[4]

OUGAZZADEN A, 4TH P INT C INP REL, P36

[5]

STRINGFELLOW GB, 1988, ORGANOMETALLIC VAPOR, P29

[6] HIGH-PERFORMANCE 1.5 MICRO-M WAVELENGTH INGAAS-INGAASP STRAINED QUANTUM-WELL LASERS AND AMPLIFIERS [J].

THIJS, PJA ;

TIEMEIJER, LF ;

KUINDERSMA, PI ;

BINSMA, JJM ;

VANDONGEN, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1426-1439

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