FABRICATION OF NANOSTRUCTURES IN ALGASB INAS USING ELECTRON-BEAM LITHOGRAPHY AND CHEMICALLY ASSISTED ION-BEAM ETCHING

被引：9

作者：

ARAFA, M

YOUTSEY, C

GRUNDBACHER, R

ADESIDA, I

KLEM, J

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[2] SANDIA NATL LABS,COMPOUND SEMICOND LAB,ALBUQUERQUE,NM 87185

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3623 / 3625

页数：3

共 4 条

[1] DESIGN AND ANALYSIS OF INAS/ALSB BALLISTIC CONSTRICTIONS FOR HIGH-TEMPERATURE OPERATION AND LOW GATE LEAKAGE [J].

KOESTER, SJ ;

BOLOGNESI, CR ;

HU, EL ;

KROEMER, H ;

ROOKS, MJ ;

SNIDER, GL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2528-2531

[2] QUANTIZED CONDUCTANCE OF BALLISTIC CONSTRICTIONS IN INAS/ALSB QUANTUM-WELLS [J].

KOESTER, SJ ;

BOLOGNESI, CR ;

ROOKS, MJ ;

HU, EL ;

KROEMER, H .

APPLIED PHYSICS LETTERS, 1993, 62 (12) :1373-1375

[3] INDIUM ARSENIDE - A SEMICONDUCTOR FOR HIGH-SPEED AND ELECTROOPTICAL DEVICES [J].

MILNES, AG ;

POLYAKOV, AY .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 18 (03) :237-259

[4] INDIUM ARSENIDE QUANTUM WIRES FABRICATED BY ELECTRON-BEAM LITHOGRAPHY AND WET-CHEMICAL ETCHING [J].

YOH, K ;

KIYOMI, K ;

NISHIDA, A ;

INOUE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4515-4519

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