SWITCHING PROPERTIES OF EPITAXIAL PLANAR TRANSISTORS OPERATING IN SATURATION

被引：11

作者：

BHATTACHARYYA, AB ^{[1
]}

SRIVASTAVA, A ^{[1
]}

KUMAR, R ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT PHYS,NEW DELHI 110029,INDIA

来源：

关键词：

D O I：

10.1016/0038-1101(75)90060-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：277 / 286

页数：10

共 32 条

[1]

ABRAMOWITZ M, 1965, HDB MATHEMATIC FUNCT

[2]

AGAKHANYAN TM, 1963, SEMICONDUCTOR DEVICE, V10, P440

[3]

AGAKHANYAN TM, 1963, SEMICONDUCTOR DEVICE, V10, P338

[4]

ALLEN GD, 1966, THESIS U WASHINGTON

[5] CURRENT GAIN AT L-H JUNCTIONS IN GERMANIUM [J].

ARTHUR, JB ;

GIBSON, AF ;

GUNN, JB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (07) :705-711

[6]

ASHAR KG, 1964, SOLID ST DES, V5, P24

[7]

BASEVARAJ TN, 1973, SOL ST ELEC, V16, P921

BEALE, JRA ;

SLATTER, JAG .

[9]

Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[10]

de Graaff H. C., 1971, Philips Research Reports, V26, P191