THE DESIGN OF ANISOTROPICALLY ETCHED-III-V SOLAR-CELLS

被引:9
作者
ROEDEL, RJ
HOLM, PM
机构
来源
SOLAR CELLS | 1984年 / 11卷 / 03期
关键词
D O I
10.1016/0379-6787(84)90012-7
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页码:221 / 239
页数:19
相关论文
共 10 条
[1]  
Arndt R. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P40
[2]  
Baraona C. R., 1975, 11th IEEE Photovoltaic Specialists Conference, P44
[3]   SILICON SOLAR-CELL WITH A NOVEL LOW-RESISTANCE EMITTER STRUCTURE [J].
BORDEN, PG ;
WALSH, RV .
APPLIED PHYSICS LETTERS, 1982, 41 (07) :649-651
[4]  
CORSON DR, 1962, INTRO ELECTROMAGNETI, pCH11
[5]  
DALE B, 1960, 14TH P ANN POW SOURC
[6]   ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :169-&
[7]   GAAS CONCENTRATOR SOLAR CELL [J].
JAMES, LW ;
MOON, RL .
APPLIED PHYSICS LETTERS, 1975, 26 (08) :467-470
[8]   DESIGN OF ANTI-REFLECTION COATINGS FOR TEXTURED SILICON SOLAR-CELLS [J].
SOPORI, BL ;
PRYOR, RA .
SOLAR CELLS, 1983, 8 (03) :249-261
[9]   PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J].
TARUI, Y ;
KOMIYA, Y ;
HARADA, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :118-&
[10]   PROFILE AND GROOVE-DEPTH CONTROL IN GAAS DIFFRACTION GRATINGS FABRICATED BY PREFERENTIAL CHEMICAL ETCHING IN H2SO4-H2O2-H2O SYSTEM [J].
TSANG, WT ;
WANG, S .
APPLIED PHYSICS LETTERS, 1976, 28 (01) :44-46