CAPLESS RAPID THERMAL ANNEALING OF GAAS USING A GRAPHITE SUSCEPTOR

被引：4

作者：

KAZIOR, TE

BRIERLEY, SK

PIEKARSKI, FJ

机构：

[1] Raytheon Company, Research Division, Lexington, MA, 02173

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1991年 / 4卷 / 01期

关键词：

D O I：

10.1109/66.75860

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of experiments to evaluate the use of a commercially available rapid thermal annealer (RTA) with a graphite susceptor for capless rapid thermal annealing to activate implants in GaAs are reported. The interior of the susceptor was easily charged with As by annealing a sacrificial GaAs wafer. Wafers annealed face up in the charged susceptor showed no evidence of surface degradation (due to preferential loss of As) and no decrease in implant activation (peak doping) when compared to dielectric (SiO2) capped anneals. To date over 50 wafers have been annealed without recharging the susceptor. In addition, slip on 3-inch wafers was almost completely eliminated due to the reduction of radial temperature gradients.

引用

页码：21 / 25

页数：5

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