INFLUENCE OF MISFIT DISLOCATIONS ON THE SURFACE-MORPHOLOGY OF SI1-XGEX FILMS

被引:158
作者
LUTZ, MA
FEENSTRA, RM
LEGOUES, FK
MOONEY, PM
CHU, JO
机构
[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1063/1.114112
中图分类号
O59 [应用物理学];
学科分类号
摘要
The influence of misfit dislocations on the surface morphology of partially strain relaxed Si1-xGex films is studied by atomic force microscopy and transmission electron microscopy. Surface steps arising from the formation of single and multiple 60°dislocations are identified. The role of such steps in the development of a cross-hatch pattern in surface morphology is discussed. © 1995 American Institute of Physics.
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页码:724 / 726
页数:3
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