INFLUENCE OF MISFIT DISLOCATIONS ON THE SURFACE-MORPHOLOGY OF SI1-XGEX FILMS

被引：158

作者：

LUTZ, MA

FEENSTRA, RM

LEGOUES, FK

MOONEY, PM

CHU, JO

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.114112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of misfit dislocations on the surface morphology of partially strain relaxed Si1-xGex films is studied by atomic force microscopy and transmission electron microscopy. Surface steps arising from the formation of single and multiple 60°dislocations are identified. The role of such steps in the development of a cross-hatch pattern in surface morphology is discussed. © 1995 American Institute of Physics.

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页码：724 / 726

页数：3

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