FABRICATION AND CHARACTERIZATION OF CROSS-EDGE-STRUCTURED VERTICAL FIELD EMITTER ARRAYS

被引：2

作者：

ISHIZAKI, M ^{[1
]}

GAMO, H ^{[1
]}

KANEMARU, S ^{[1
]}

ITOH, J ^{[1
]}

机构：

[1] TOPPAN PRINTING CO LTD,SUGITO,SAITAMA 345,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期

关键词：

VACUUM MICROELECTRONICS; FIELD EMITTER ARRAY; DISK-EDGE FIELD EMITTER ARRAY; CROSS-EDGE-STRUCTURED FIELD EMITTER ARRAY; CROSS-EDGE-STRUCTURED VERTICAL FIELD EMITTER ARRAY; EMISSION CURRENT; ANODE-CURRENT FRACTION; DIVERGENT ANGLE;

D O I：

10.1143/JJAP.33.7171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

New field emitter arrays (FEAs), called cross-edge-structured vertical FEAs, were fabricated and characterized. Chromium (Cr) emitters and molybdenum/Cr emitters were tested. The anode-current fraction was 50%, being improved in comparison with that of disk-edge FEAs. Threshold voltage of the anode current was a low voltage of 25 V. From the light emission pattern, divergent angle was estimated to be 9 degrees.

引用

页码：7171 / 7175

页数：5

共 5 条

[1]

Busta H. H., 1992, Journal of Micromechanics and Microengineering, V2, P43, DOI 10.1088/0960-1317/2/2/001

[2] Electron emission in intense electric fields [J].