ELECTRICAL-PROPERTIES OF NEUTRON-TRANSMUTATION-DOPED GAAS BELOW 450-K

被引：44

作者：

VESAGHI, MA ^{[1
]}

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.5436

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5436 / 5450

页数：15

共 44 条

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