AVOIDANCE OF GROWTH-STRIAE IN SEMICONDUCTOR AND METAL CRYSTALS GROWN BY ZONE-MELTING TECHNIQUES

被引：106

作者：

CHEDZEY, HA

HURLE, DTJ

机构：

来源：

关键词：

D O I：

10.1038/210933a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：933 / &

共 7 条

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[3] Eddington A. S., 1926, INTERNAL CONSTITUTIO
[4] TEMPERATURE OSCILLATIONS IN MOLTEN METALS AND THEIR RELATIONSHIP TO GROWTH STRIAE IN MELT-GROWN CRYSTALS
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[J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (122): : 305 - &
[5] HURLE DTJ, IN PRESS
[6] VITREOUS CARBON AS A CRUCIBLE MATERIAL FOR SEMICONDUCTORS
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[J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 251 - &
[7] MULLER A, 1964, Z NATURFORSCH, VA 19, P254