SB SURFACE SEGREGATION AND DOPING IN SI(100) GROWN AT REDUCED TEMPERATURE BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

HOBART, KD ^{[1
]}

GODBEY, DJ ^{[1
]}

THOMPSON, PE ^{[1
]}

SIMONS, DS ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,DIV SURFACE & MICROANAL SCI,GAITHERSBURG,MD 20899

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.109683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy, depth profiling with secondary ion mass spectrometry, and conductivity measurements have been performed on Sb-doped Si(100) -films grown at low temperature (350-degrees-C) by molecular beam epitaxy. The measurements reveal two important effects: (1) a significant increase in the surface segregation of Sb as the dopant concentration approaches 1 X 10(20) CM-3 , and (2) a decrease in surface segregation as the surface concentration of Sb reaches one monolayer. We believe that the presence of this monolayer of Sb is responsible for the surface segregation becoming self-limited and the associated bulk concentration exceeding 1 X 10(20) CM-3.

引用

页码：1381 / 1383

页数：3

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