SITE-COMPETITION EPITAXY FOR SUPERIOR SILICON-CARBIDE ELECTRONICS

被引：262

作者：

LARKIN, DJ

NEUDECK, PG

POWELL, JA

MATUS, LG

机构：

[1] NASA Lewis Research Center, Cleveland

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present and discuss a novel dopant control technique for compound semiconductors, called site-competition epitaxy, which enables a much wider range of reproducible doping control and affords much higher and lower epilayer doping concentrations than was previously possible. Site-competition epitaxy is presented for the chemical vapor deposition of 6H-SiC epilayers on commercially available (0001)SiC silicon-face substrates. Results from utilizing site-competition epitaxy include the production of degenerately doped SiC epilayers for ohmic-as-deposited (i.e., unannealed) metal contacts as well as very low doped epilayers for electronic devices exhibiting SiC record-breaking reverse voltages of 300 and 2000 V for 3C- and 6H-SiC p-n junction diodes, respectively.

引用

页码：1659 / 1661

页数：3

共 15 条

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[8] Larkin D J, 1994, SILICON CARBIDE RELA, P51
[9] 2000-V 6H-SIC P-N-JUNCTION DIODES GROWN BY CHEMICAL-VAPOR-DEPOSITION
NEUDECK, PG
LARKIN, DJ
POWELL, JA
MATUS, LG
SALUPO, CS
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (11) : 1386 - 1388
[10] GREATLY IMPROVED 3C-SIC P-N-JUNCTION DIODES GROWN BY CHEMICAL VAPOR-DEPOSITION
NEUDECK, PG
LARKIN, DJ
STARR, JE
POWELL, JA
SALUPO, CS
MATUS, LG
[J]. IEEE ELECTRON DEVICE LETTERS, 1993, 14 (03) : 136 - 139

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