ELECTRON LOCALIZATION ON DEFECTS AND OPTICAL NUCLEAR-POLARIZATION IN DISORDERED AND SEMIMAGNETIC SEMICONDUCTORS

被引：22

作者：

BAGRAEV, NT

机构：

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90253-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：236 / 243

页数：8

共 16 条

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[4] BAGRAEV NT, 1981, SOV PHYS SEMICOND+, V15, P48
[5] BAGRAEV NT, 1980, JETP LETT+, V32, P195
[6] BAGRAEV NT, 1982, IZV AN SSSR FIZ+, V46, P455
[7] ONP INVESTIGATION OF CLUSTER FORMATION IN DOPED SILICON SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI METHOD
BAGRAEV, NT
VLASENKO, LS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 764 - 766
[8] BAGRAEV NT, 1981, ZH TEKH FIZ PISMA, V7, P961
[9] BAGRAYEV NT, 1981, ZH EKSP TEOR FIZ+, V81, P2160
[10] SUR LA RELAXATION NUCLEAIRE DANS LES CRISTAUX IONIQUES
DEGENNES, PG
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (04) : 345 - 350