CRYSTALLINITY OF ZNSTB,F THIN-FILMS AND CHARACTERISTICS OF GREEN-COLOR THIN-FILM ELECTROLUMINESCENT DEVICES PREPARED BY RF-MAGNETRON SPUTTERING

被引：10

作者：

HSU, CT ^{[1
]}

LIN, YJ ^{[1
]}

SU, YK ^{[1
]}

YOKOYAMA, M ^{[1
]}

机构：

[1] NATL YUNLIN POLYTECH INST,DEPT ELECT ENGN,HSINCHU,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.352121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to fabricate high-brightness thin-film electroluminescent devices, the dependence of crystallinity on deposition conditions of the ZnS:Tb,F thin films deposited by rf-magnetron sputtering system have been studied. The optimal deposition conditions to get the best crystallinity are obtained as rf power density of 4.39 W/cm2, substrate temperature 150-degrees-C, and post-anneal at 550-degrees-C for 1 h. The (111) plane spacing and lattice constant are 3.1238 and 5.411 angstrom, respectively. The green electroluminescent devices with the structure of glass/indium-tin-oxide/SiO2/HfO2/ZnS:Tb,F/HfO2/SiO2/Al have the highest brightness and luminous efficiency h(eta) of 830 cd/m2 and 0.8 lm/W, respectively, under 1 kHz sinusoidal wave voltage excitation and the Commission Internationale de l'Eclairage chromaticity is x=0.3096, y=0.5998, respectively.

引用

页码：4655 / 4659

页数：5

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