MAGNETIC-FIELD-INDUCED LOCALIZATION IN INSB AND HG0.79CD0.21TE

被引：34

作者：

SHAYEGAN, M

GOLDMAN, VJ

DREW, HD

NELSON, DA

TEDROW, PM

机构：

[1] UNIV MARYLAND,DEPT PHYS & ASTRON,COLLEGE PK,MD 20742

[2] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

[3] HONEYWELL ELECTRO-OPT DIV,LEXINGTON,MA 02173

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.32.6952

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6952 / 6955

页数：4

共 14 条

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[6] SATURATION OF IMPURITY CYCLOTRON-RESONANCE AND EFFECT 337 MUM RADIATION ON CARRIER NUMBERS AND MOBILITIES IN INSB [J].

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[8] MAGNETIC-FIELD-INDUCED LOCALIZATION TRANSITION IN HGCDTE [J].

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NELSON, DA ;

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[9] ELECTRON CORRELATION-EFFECTS ON THE MAGNETIC-FIELD-INDUCED METAL-INSULATOR-TRANSITION IN HG0.79CD0.21TE [J].

SHAYEGAN, M ;

DREW, HD ;

NELSON, DA ;

TEDROW, PM .

PHYSICAL REVIEW B, 1985, 31 (09) :6123-6126

[10]

SHAYEGAN M, UNPUB

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