DEFORMATION-FREE OVERGROWTH OF INGAASP DFB CORRUGATIONS

被引：27

作者：

NELSON, AW

WESTBROOK, LD

EVANS, JS

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 02期

关键词：

D O I：

10.1049/el:19830026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：34 / 36

页数：3

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[6] HIGH-QUALITY INP SURFACE CORRUGATIONS FOR 1.55-MU-M INGAASP DFB LASERS FABRICATED USING ELECTRON-BEAM LITHOGRAPHY
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